semiconductors summary v (br)dss =100v : r ds(on) =0.085 ; id=7.7a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. features ? low on-resistance ? fast switching speed ? low gate drive ? d-pak (t0-252) package applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control device marking ? zxmn 10a09k ZXMN10A09K issue 4 - february 2004 100v n-channel enhancement mode mosfet in d-pak 1 device reel size tape width quantity per reel ZXMN10A09Ktc 13? 16mm 2,500 units ordering information pinout top view d p a k
ZXMN10A09K semiconductors issue 4 - february 2004 2 parameter symbol limit unit drain-source voltage v dss 100 v gate-source voltage v gs 20 v continuous drain current @ v gs =10v; t a =25c (b) @v gs =10v; t a =70c (b) @v gs =10v; t a =25c (a) i d 7.7 6.2 5 a a a pulsed drain current (c) i dm 27 a continuous source current (body diode) (b) i s 11 a pulsed source current (body diode) (c) i sm 27 a power dissipation at t a =25c (a) linear derating factor p d 4.3 34.4 w mw/c power dissipation at t a =25c (b) linear derating factor p d 10.1 80.8 w mw/c power dissipation at t a =25c (d) linear derating factor p d 2.15 17.2 w mw/c operating and storage temperature range t j ,t stg -55 to +150 c absolute maximum ratings parameter symbol v alue unit junction to ambient (a) r ja 29 c/w junction to ambient (b) r ja 12.3 c/w junction to ambient (d) r ja 58 c/w notes (a) for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air con ditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 50mm x 50mm x 1.6mm fr4 pcb, d=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air cond itions. thermal resistance
ZXMN10A09K semiconductors issue 4 - february 2004 3 typical characteristics
ZXMN10A09K semiconductors issue 4 - february 2004 4 parameter symbol min. typ. max. unit c onditions static drain-source breakdown voltage v (br)dss 100 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 1 av ds = 100v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 2.0 4.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.085 v gs = 10v, i d = 4.6a 0.100 v gs =6v,i d =4.2a forward transconductance (1) (3) g fs 10.7 s v ds = 15v, i d = 4.6a dynamic (3) input capacitance c iss 1313 pf v ds = 50v, v gs =0v f=1mhz output capacitance c oss 83 pf reverse transfer capacitance c rss 56 pf switching (2) (3) turn-on-delay time t d(on) 6.8 ns v dd = 50v, i d =1a r g ? 6.0 ,v gs = 10v rise time t r 5.3 ns turn-off delay time t d(off) 27.5 ns fall time t f 12.3 ns total gate charge q g 17.2 nc v ds = 50v, v gs =6v i d = 4.6a total gate charge q g 26 nc v ds = 50v, v gs = 10v i d = 4.6a gate-source charge q gs 5.6 nc gate drain charge q gd 7.6 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s = 4.7a, v gs =0v reverse recovery time (3) t rr 40 ns t j =25c, i s = 3a, di/dt=100a/ s reverse recovery charge (3) q rr 62 nc electrical characteristics (at t amb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMN10A09K semiconductors issue 4 - february 2004 5 typical characteristics
ZXMN10A09K semiconductors issue 4 - february 2004 6 typical characteristics
ZXMN10A09K semiconductors issue 4 - february 2004 7 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 controlling dimensions are in millimeters. approximate conversions are given in inches package outline dim millimeters inches dim millimeters inches min max min max min max min max a 2.18 2.38 0.086 0.094 e 2.30 bsc 0.090 bsc a1 0.127 0.005 h 9.40 10.41 0.370 0.410 b 0.635 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.762 1.114 0.030 0.045 l1 2.74 ref 0.108 ref b3 5.20 5.46 0.205 0.215 l2 0.051 bsc 0.020 bsc c 0.457 0.609 0.018 0.024 l3 0.89 1.27 0.035 0.050 c2 0.457 0.584 0.018 0.023 l4 0.635 1.01 0.025 0.040 d 5.97 6.22 0.235 0.245 l5 1.14 1.52 0.045 0.060 d1 5.20 0.205 1 0 10 0 10 e 6.35 6.73 0.250 0.265 0 15 0 15 e1 4.32 0.170 package dimensions
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